Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting

Waghmare, Ashish, Sharma, Vidhika, Shinde, Pratibha, Punde, Ashvini, Vairale, Priti, Hase, Yogesh, Pandharkar, Subhash, Nair, Shruthi, Aher, Rahul, Doiphode, Vidya, Shah, Shruti, Rahane, Swati, Bade, Bharat, Prasad, Mohit, Rondiya, Sachin and Jadkar, Sandesh 2022. Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting. Journal of Solid State Electrochemistry 26 (1) , pp. 219-232. 10.1007/s10008-021-05054-1

Full text not available from this repository.

Abstract

Indium selenide (γ-In2Se3) films were prepared using RF magnetron sputtering. Influence of deposition time on structural, optical, morphological, and photoelectrochemical (PEC) performance was studied. Formation of γ-In2Se3 is confirmed by low angle XRD, Raman spectroscopy, and XPS analysis. Surface morphology investigated using FE-SEM shows that γ-In2Se3 films are uniform and have a dense grain structure, without cracks and holes. Optical properties show that γ-In2Se3films absorb mainly in the UV region, and the bandgap energy decreases from 2.81 to 2.27 eV as deposition duration increases. Conduction and valance band-edge potential values show that γ-In2Se3 films are suitable for photoelectrochemical hydrogen evolution. PEC activity of γ-In2Se3 photoanodes was evaluated using linear sweep voltammetry (LSV), and there was an increase in photocurrent density with deposition time. Electron impedance spectroscopy (EIS) analysis revealed that γ-In2Se3 photoanodes had high charge transfer resistance, and it decreases with deposition time, which leads to improved PEC performance. Investigation of Mott Schottky's (MS) results shows a shifting of flat band potential towards negative potential, suggesting movement of fermi level towards conduction band edge. Carrier density increases from 3.7 × 1019 cm−3 to 8.9 × 1020 cm−3 and depletion layer width of γ-In2Se3 photoanodes are found in the range of ~ 2.67–9.10 nm. The gradual increase in electron lifetime indicates a decrease in the recombination rate of photo-generated charge carriers. An increase in time-dependent photocurrent density reveals that γ-In2Se3 films have effective electron–hole separation. Our work demonstrates that γ-In2Se3 can be a probable candidate for PEC water splitting and opto-electronic applications.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Chemistry
Publisher:	Springer
ISSN:	1432-8488
Date of Acceptance:	20 September 2021
Last Modified:	21 Mar 2022 12:45
URI:	https://orca.cardiff.ac.uk/id/eprint/148269

Citation Data

Cited 2 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item