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Relaxation and dephasing of multiexcitons in semiconductor quantum dots

Borri, Paola, Langbein, Wolfgang Werner, Schneider, S., Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2002. Relaxation and dephasing of multiexcitons in semiconductor quantum dots. Physical Review Letters (PRL) 89 (18) , 187401. 10.1103/PhysRevLett.89.187401

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Abstract

We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0031-9007
Last Modified: 01 Jun 2019 22:14
URI: http://orca.cf.ac.uk/id/eprint/1542

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