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Temperature dependence of threshold current in p-doped quantum dot lasers

Sandall, Ian C., Smowton, Peter Michael, Thomson, John Duncan, Baddock, T., Mowbray, D. J., Liu, H.-Y. and Hopkinson, M. 2006. Temperature dependence of threshold current in p-doped quantum dot lasers. Applied Physics Letters 89 (15) , pp. 15111801-15111803. 10.1063/1.2361167

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Abstract

The authors measure the temperature dependence of the components of threshold current of 1300?nm undoped and p-doped quantum dot lasers and show that the temperature dependence of the injection level necessary to achieve the required gain is the largest factor in producing the observed negative T0 in p-doped quantum dot lasers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Additional Information: ------- Publisher's copyright requirements "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tian, Y and Li, G and Shinar, J and Wang, N. L. and Cook, B A and Anderegg, J. W. and Constant, A. P. and Russell, A M and Snyder, John Evan (2004) Electrical transport in amorphous semiconducting AlMgB14 films. Applied Physics Letters , 85 (7). pp. 1181-1183. ISSN 10773118 (10.1063/1.1781738)and may be found at http://apl.aip.org/resource/1/applab/v85/i7/p1181_s1."
ISSN: 0003-6951
Last Modified: 04 Jun 2017 01:40
URI: http://orca.cf.ac.uk/id/eprint/1578

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