Interfacial passivation engineering for highly efficient quantum dot light-emitting diodes via aromatic amine-functionalized dipole molecules

Cai, Fensha, Li, Meng, Zhang, Han, Wang, Yunqi, Li, Zhe, Tu, Yufei, Aldamasy, Mahmoud H., Jiang, Xiaohong, Hou, Bo ORCID: https://orcid.org/0000-0001-9918-8223, Wang, Shujie and Du, Zuliang 2024. Interfacial passivation engineering for highly efficient quantum dot light-emitting diodes via aromatic amine-functionalized dipole molecules. Nano Letters 24 (5) , pp. 1594-1601. 10.1021/acs.nanolett.3c04229 Item availability restricted.

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Abstract

Blue quantum dot (QD) light-emitting diodes (QLEDs) exhibit unsatisfactory operational stability and electroluminescence (EL) properties due to severe nonradiative recombination induced by large numbers of dangling bond defects and charge imbalance in QD. Herein, dipolar aromatic amine-functionalized molecules with different molecular polarities are employed to regulate charge transport and passivate interfacial defects between QD and the electron transfer layer (ETL). The results show that the stronger the molecular polarity, especially with the −CF3 groups possessing a strong electron-withdrawing capacity, the more effective the defect passivation of S and Zn dangling bonds at the QD surface. Moreover, the dipole interlayer can effectively reduce electron injection into QD at high current density, enhancing charge balance and mitigating Joule heat. Finally, blue QLEDs exhibit a peak external quantum efficiency (EQE) of 21.02% with an operational lifetime (T50 at 100 cd m–2) exceeding 4000 h.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Chemical Society
ISSN:	1530-6984
Date of First Compliant Deposit:	23 December 2023
Date of Acceptance:	20 December 2023
Last Modified:	18 Mar 2024 18:45
URI:	https://orca.cardiff.ac.uk/id/eprint/165050

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