Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices

Maglio, Benjamin, Jarvis, Lydia, Tang, Mingchu, Liu, Huiyun and Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842 2024. Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices. Optical and Quantum Electronics 56 (4) , 687. 10.1007/s11082-024-06362-2

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Abstract

A modelling routine has been developed to quantify effects present in p-modulation doped 1.3 μm InAs/InGaAs quantum dot laser and modulator devices. Utilising experimentally verified parameters, calculated modal absorption is compared to measurements, prior to simulation of structures under reverse and forward bias. Observed broadening and a reduction of absorption in p-doped structures is attributed primarily to increased carrier scattering rates and can bring benefit when structures are configured as optical modulators with enhancements in the figure of merit. However, increased carrier scattering limits the maximum modal gain that can be achieved for lasers. The state filling caused by p-doping only marginally reduces absorption but assists laser operation with increased differential gain and gain magnitude at lower current densities.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Additional Information:	This article has a correction: Maglio, B., Jarvis, L., Tang, M. et al. Correction: Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices. Opt Quant Electron 56, 991 (2024). https://doi.org/10.1007/s11082-024-06961-z
Publisher:	Springer
ISSN:	0306-8919
Funders:	EPSRC
Related URLs:	https://doi.org/10.1007/s11082-024-06961...
Date of First Compliant Deposit:	19 February 2024
Date of Acceptance:	12 January 2024
Last Modified:	26 Apr 2024 08:34
URI:	https://orca.cardiff.ac.uk/id/eprint/166388

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