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Suppression of the parasitic buffer layer conductance in InSb/AlxIn1-xSb heterostructures using a wide-band-gap barrier layer

Gilbertson, A. M., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Emeny, M. T., Ashley, T. and Cohen, L. F. 2011. Suppression of the parasitic buffer layer conductance in InSb/AlxIn1-xSb heterostructures using a wide-band-gap barrier layer. Physical Review B 84 (7) , 075474. 10.1103/PhysRevB.84.075474

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Abstract

InSb/AlxIn1-xSb heterostructures display intrinsic parallel conduction in the buffer layer at room temperature that limits exploitation of the high-mobility two-dimensional electron gas (2DEG), particularly for nanostructured devices where deep isolation etch processing is impractical. Here, we demonstrate a strategy to reduce the parasitic conduction by the insertion of a pseudomorphic barrier layer of wide-band-gap alloy below the QW. We have studied the high-field magnetotransport in two types of InSb/AlxIn1-xSb modulation doped quantum well heterostructures with and without the barrier layer in the temperature range 2–290 K and magnetic fields to 7.5 T. The conduction in the doping layer, the 2DEG, and the buffer layer are analyzed using a multi-carrier model that successfully captures the field dependence of the Hall resistance over the experimental field range. Samples with the barrier layer show significantly reduced buffer layer conduction compared to samples without. Our results are expected to be of importance for ambient temperature nano-electronic operation.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 1098-0121
Last Modified: 20 May 2023 18:53
URI: https://orca.cardiff.ac.uk/id/eprint/17271

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