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Highly efficient operation modes in GaN power transistors delivering upwards of 81% efficiency and 12W output power

Wright, Peter Thomas, Sheikh, Aamir, Roff, Chris, Tasker, Paul J. and Benedikt, Johannes 2008. Highly efficient operation modes in GaN power transistors delivering upwards of 81% efficiency and 12W output power. Presented at: IEEE MTT-S International Microwave Symposium, Atlanta, GA, USA, 15-20 June 2008. Proceedings of the IEEE MTT-S International Microwave Symposium Digest, Atlanta, USA, 15-20 June 2008. Piscataway, NJ: Institute of Electrical and Electronics Engineers, pp. 1147-1150. 10.1109/MWSYM.2008.4633260

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Abstract

This paper investigates the development of an inverse class-F design procedure for obtaining very high efficiency performance at high power levels. RF waveform engineering was used to obtain high efficiency inverse class-F waveforms at the device current-generator plane. Drain efficiencies above 81% have been achieved at 0.9 and 2.1 GHz for a wide band-gap gallium nitride (GaN) HEMT transistor and 12 W fundamental output power. Investigations into improvements in drain efficiency through increases in drain bias voltage have yielded drain efficiencies of up to 84% at 2.1 GHz. To the authorpsilas knowledge, the efficiencies presented in this study are the highest published, measured efficiencies of a high power GaN HEMT at these frequencies.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher: Institute of Electrical and Electronics Engineers
ISBN: 9781424417803
Last Modified: 04 Jun 2017 03:10
URI: http://orca.cf.ac.uk/id/eprint/17594

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