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Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators

Rodríguez-Madrid, J. G., Iriarte, G. F., Araujo, D., Villar, M. P., Williams, Oliver Aneurin, Müller-Sebert, W. and Calle, F. 2012. Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators. Materials Letters 66 (1) , pp. 339-342. 10.1016/j.matlet.2011.09.003

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Abstract

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Diamond; AlN sputtering; High frequency; SAW resonators
Publisher: Elsevier
ISSN: 0167-577X
Funders: EPSRC
Last Modified: 04 Jun 2017 03:12
URI: http://orca.cf.ac.uk/id/eprint/18033

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