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Many-body effects in InAs/GaAs quantum dot laser structures

O'Driscoll, Ian, Hutchings, Matthew, Smowton, Peter Michael and Blood, Peter 2010. Many-body effects in InAs/GaAs quantum dot laser structures. Applied Physics Letters 97 (14) , 141102. 10.1063/1.3496011

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Abstract

We have measured the gain peak energy of GaInAs quantum dot laser structures, relative to the absorption peak, as a function of injection. We have used a calculation to remove the effects of state filling in the inhomogeneous distribution and to estimate the carrier density in the dots. We have identified shifts, which we associate with many body effects, of up to 8 meV at room temperature at injection levels typical for laser operation of about 2.2 electrons per dot, producing a peak modal gain of 10 cm-1.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: carrier density, gallium arsenide, indium compounds, laser beams, quantum dot lasers
Additional Information: 3 pp.
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 06 Mar 2018 20:46
URI: http://orca.cf.ac.uk/id/eprint/18087

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