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Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers

Ferguson, James, Smowton, Peter Michael, Blood, Peter, Bae, H., Sarmiento, T. and Harris, J. 2009. Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers. Applied Physics Letters 95 (23) , 231104. 10.1063/1.3271182

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Abstract

We have shown experimentally that in GaInNAsSb/GaAs quantum-well lasers there are significant nonradiative contributions to threshold current from the barriers and the well. By matching a simulation to the experiment we find that Auger recombination in the barriers is very weak, due to the low carrier density. Shockley–Read–Hall recombination is the dominant source of nonradiative current, with the barriers making the major contribution, possibly due to their higher defect density than the wells. This suggests that significant improvements could be made by optimizing growth conditions and layer design, with particular attention to the barrier.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Auger effect, electron-hole recombination, gallium compounds, III-V semiconductors, indium compounds, quantum well lasers, wide band gap semiconductors
Additional Information: 3 pp.
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 04 Jun 2017 03:12
URI: http://orca.cf.ac.uk/id/eprint/18103

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Cited 1 time in Web of Science. View in Web of Science.

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