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Low-temperature transport in highly boron-doped nanocrystalline diamond

Achatz, P., Gajewski, W., Bustarret, E., Marcenat, C., Piquerel, R., Chapelier, C., Dubouchet, T., Williams, Oliver Aneurin, Haenen, K., Garrido, J. and Stutzmann, M. 2009. Low-temperature transport in highly boron-doped nanocrystalline diamond. Physical Review B: Condensed Matter and Materials Physics 79 (20) , 201203(R). 10.1103/PhysRevB.79.201203

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Abstract

We studied the transport properties of highly boron-doped nanocrystalline diamond thin films at temperatures down to 50 mK. The system undergoes a doping-induced metal-insulator transition with an interplay between intergranular conductance g and intragranular conductance g0, as expected for a granular system. The conduction mechanism in the case of the low-conductivity films close to the metal-insulator transition has a temperature dependence similar to Efros-Shklovskii type of hopping. On the metallic side of the transition, in the normal state, a logarithmic temperature dependence of the conductivity is observed, as expected for a metallic granular system. Metallic samples far away from the transition show similarities to heavily boron-doped single-crystal diamond. Close to the transition, the behavior is richer. Global phase coherence leads in both cases to superconductivity (also checked by ac susceptibility), but a peak in the low-temperature magnetoresistance measurements occurs for samples close to the transition. Corrections to the conductance according to superconducting fluctuations account for this negative magnetoresistance.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 1098-0121
Last Modified: 04 Jun 2017 03:14
URI: http://orca.cf.ac.uk/id/eprint/18698

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