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Optical properties of heavily boron-doped nanocrystalline diamond films studied by spectroscopic ellipsometry

Zimmer, A., Williams, Oliver Aneurin, Haenen, K. and Terryn, H. 2008. Optical properties of heavily boron-doped nanocrystalline diamond films studied by spectroscopic ellipsometry. Applied Physics Letters 93 (13) , 131910. 10.1063/1.2990679

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The optical properties of heavily boron-doped nanocrystalline diamond films grown by microwave plasma enhanced chemical vapor deposition on silicon substrates are presented. The diamond films are characterized by spectroscopic ellipsometry within the midinfrared, visible, and near-ultraviolet regions. The ellipsometric spectra are also found to be best described by a four-phase model yielding access to the optical constants, which are found distinct from previous nanocrystalline diamond literature values. The presence of a subgap absorption yielding high extinction coefficient values defined clearly the boron incorporated films in comparison to both undoped and composite films, while refractive index values are relatively comparable.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: boron, diamond, elemental semiconductors, ellipsometry, extinction coefficients, heavily doped semiconductors, infrared spectra, plasma CVD, semiconductor thin films, ultraviolet spectra, visible spectra, wide band gap semiconductors
Additional Information: 3 pp.
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 04 Jun 2017 03:14

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