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Transparent current spreading layers for optoelectronic devices

Porch, Adrian, Morgan, David Vernon, Perks, Richard Marc, Jones, M. O. and Edwards, P. P. 2004. Transparent current spreading layers for optoelectronic devices. Journal of Applied Physics 96 (8) , pp. 4211-4218. 10.1063/1.1786674

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Abstract

In this paper we develop a simple model based on a leaky transmission line to assess the electrical performance of transparent current spreading layers for application to surface light emitting diodes. Figures of merit suitable for device design are obtained and these are applied to a range of material systems reported in the literature. These calculations show that materials with electrical characteristics approaching ultimate performance limits can be achieved. Furthermore, calculations of the electromagnetic absorption of conducting layers show that further improvements should be possible by selecting materials with the highest possible majority carrier mobilities, which enable films of greater thickness to be grown while maintaining high transparency, leading to very low spreading layer resistances. Ways of achieving improved mobility are also discussed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Additional Information: Publisher's copyright requirements "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tian, Y and Li, G and Shinar, J and Wang, N. L. and Cook, B A and Anderegg, J. W. and Constant, A. P. and Russell, A M and Snyder, John Evan (2004) Electrical transport in amorphous semiconducting AlMgB14 films. Applied Physics Letters , 85 (7). pp. 1181-1183. ISSN 10773118 (10.1063/1.1781738)and may be found at http://apl.aip.org/resource/1/applab/v85/i7/p1181_s1."
ISSN: 10897550
Last Modified: 28 Jun 2019 02:28
URI: http://orca.cf.ac.uk/id/eprint/1898

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