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Low-temperature nonthermal population of InAs-GaAs quantum dots

O'Driscoll, Ian, Smowton, Peter Michael and Blood, Peter 2009. Low-temperature nonthermal population of InAs-GaAs quantum dots. IEEE Journal of Quantum Electronics 45 (4) , pp. 380-387. 10.1109/JQE.2009.2013869

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Abstract

Measurements of the unamplified spontaneous emission spectra from 80 K to 350 K of a dot ensemble show clear evidence for increased population of higher lying states in the inhomogeneous distribution as the temperature is reduced from 200 K to 80 K, indicating a nonthermal population at low temperature and confirming that the recombination processes are localized in individual dots. These conclusions are supported by modeling an inhomogeneous ensemble of 2 times 106 dots. From simultaneous measurements of optical gain, our data show that the increase in threshold current density with decreasing temperature below about 200 K (which is commonly observed) is due to increased population of higher lying states associated with the transition to nonthermal behavior.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Quantum dots (QDs) , semiconductor devices , semiconductor lasers
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0018-9197
Last Modified: 04 Jun 2017 03:34
URI: http://orca.cf.ac.uk/id/eprint/22942

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