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Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers

Michell, Gareth James, Smowton, Peter Michael and Summers, H. D. 2010. Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers. Presented at: Novel in-plane semiconductor lasers IX, San Francisco, CA, USA, 25-28 January 2010. Published in: Belyanin, A. A. and Smowton, Peter Michael eds. Proceedings of Novel In-Plane Semiconductor Lasers IX, San Francisco, USA, 28-28 January 2010. Proceedings of SPIE , vol. 7617. Bellingham, WA: SPIE, 76161T. 10.1117/12.846843

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Abstract

We describe the effects created by selective oxidation of high aluminium content AlGaAs layers at the facets of 5-stack quantum dot edge-emitting 50μm stripe lasers. The steam oxidation affects only the facet areas of the devices, where unpumped sections are created. These unpumped regions alone enable reduction of the width of the lasing near-field spatial profile of up to 65% and the reduction of threshold in long devices by up to 30%. These effects are attributed to saturable absorber-type behaviour, where the absorber saturates first at the location of highest optical intensity, so allowing lasing over a smaller spatial area. Secondly, a combination of self-heating at the facets and the saturable absorption generates novel saw-toothed wavelength-time profiles. A model for the behaviour behind all of these results is proposed and backed up with experimental data.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Absorption ; Aluminum ; Diodes ; Lasers ; Near field ; Quantum dot lasers ; Quantum dots
Publisher: SPIE
ISBN: 9780819480125
ISSN: 0277-786X
Last Modified: 04 Jun 2017 03:36
URI: http://orca.cf.ac.uk/id/eprint/23351

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