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Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures

Borri, Paola, Cesari, Valentina, Rossetti, M., Fiore, A. and Langbein, Wolfgang Werner 2009. Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures. Presented at: Physics and simulation of optoelectronic devices XVII, San Jose, CA, USA, 26-29 January 2009. Published in: Osiński, Marek, Witzigmann, Bernd, Henneberger, Fritz and Arakawa, Yasuhiko eds. Physics and simulation of optoelectronic devices XVII: 26 January 2009, San Jose, CA, USA. Proceedings of SPIE , vol. 7211. Bellingham, WA: SPIE - International Society for Optical Engineering, 72110Z. 10.1117/12.808206

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Abstract

We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300 K to 20 K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time resolution was used. The comparison shows that in the gain regime at high temperatures the recovery dynamics of the p-doped sample is slower than in the undoped device operating at the same modal gain, due to a reduced electron reservoir in the excited states. Conversely, at 20 K the initial gain dynamics is faster in the p-doped device due to hole-hole scattering.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: T Technology > T Technology (General)
T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords: semiconductor quantum dots; ultrafast dynamics; semiconductor optical amplifiers
Publisher: SPIE - International Society for Optical Engineering
ISBN: 9780819474575
Last Modified: 07 May 2019 19:23
URI: http://orca.cf.ac.uk/id/eprint/25308

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