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Si-based electroluminescence at THz frequencies

Lynch, Stephen Anthony, Dhillon, S. S., Bates, R., Paul, D. J., Arnone, D. D., Robbins, D. J., Ikonic, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Cullis, A. G., Pidgeon, C. R., Murzyn, P. and Loudon, A. 2002. Si-based electroluminescence at THz frequencies. Materials Science and Engineering: B 89 (1-3) , pp. 10-12. 10.1016/S0921-5107(01)00782-6

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Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Silicon; Germanium; Quantum effects; Luminescence
Publisher: Elsevier
ISSN: 0921-5107
Last Modified: 04 Jun 2017 03:43

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