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Toward Silicon-Based Lasers for Terahertz Sources

Lynch, Stephen Anthony, Paul, Douglas J., Townsend, Paul, Matmon, Guy, Suet, Zhang, Kelsall, Robert W., Ikonic, Zoran, Harrison, Paul, Zhang, Jing, Norris, David J., Cullis, Anthony G., Pidgeon, Carl R., Murzyn, Pawel, Murdin, Ben, Bain, Mike, Gamble, Harry S., Zhao, Ming and Ni, Wei-Xin 2006. Toward Silicon-Based Lasers for Terahertz Sources. IEEE Journal of Selected Topics in Quantum Electronics 12 (6) , pp. 1570-1578. 10.1109/JSTQE.2006.884069

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Abstract

Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried silicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISSN: 1077-260X
Last Modified: 04 Jun 2017 03:43
URI: http://orca.cf.ac.uk/id/eprint/25318

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