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Si/SiGe quantum-cascade emitters for terahertz applications

Paul, D. J., Lynch, Stephen Anthony, Bates, R., Ikonić, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Liew, S. L., Cullis, A. G., Arnone, D. D., Pidgeon, C. R., Murzyn, P., Wells, J.-P. R. and Bradley, I. V. 2003. Si/SiGe quantum-cascade emitters for terahertz applications. Physica E: Low-dimensional Systems and Nanostructures 16 (1) , pp. 147-155. 10.1016/S1386-9477(02)00590-8

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Abstract

The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at ( wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of below .

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Si/SiGe; Intersubband; Electroluminescence; Quantum cascade
Additional Information: Proceedings of the Twelfth International Winterschool on New Developments in Solids State Physics, "Low- Dimensional Systems: From 2D to Molecules"
Publisher: Elsevier
ISSN: 1386-9477
Last Modified: 04 Jun 2017 03:43
URI: http://orca.cf.ac.uk/id/eprint/25323

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