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SiGe quantum cascade structures for light emitting devices

Zhang, J., Li, X. B., Neave, J. H., Norris, D. J., Cullis, A. G., Kelsall, R. W., Lynch, Stephen Anthony, Towsend, P., Paul, D. J. and Fewster, P. F. 2005. SiGe quantum cascade structures for light emitting devices. Journal of Crystal Growth 278 (1-4) , pp. 488-494. 10.1016/j.jcrysgro.2004.12.046

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Abstract

The realisation of III–V quantum cascade lasers has initiated a strong interest in developing a Si/SiGe-based quantum cascade laser over the last 3 years. Most efforts were focused on the growth of strain-balanced Si/SiGe superlattices on strain-relaxed SiGe virtual substrates. This paper discusses the progress so far and addresses some of the material issues related to the epitaxy of Si/SiGe quantum cascade structures, including strain–stress balance and production of strain-relaxed SiGe virtual substrates.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: A1. Stresses; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon compounds
Additional Information: 13th International Conference on Molecular Beam Epitaxy
Publisher: Elsevier
ISSN: 0022-0248
Last Modified: 04 Jun 2017 03:43
URI: http://orca.cf.ac.uk/id/eprint/25326

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