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Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates

Zhao, M., Ni, W.-X., Townsend, P., Lynch, Stephen Anthony, Paul, D. J., Hsu, C. C. and Chang, M. N. 2006. Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates. Thin Solid Films 508 (1-2) , pp. 24-28. 10.1016/j.tsf.2005.07.355

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Abstract

Si/SiGe quantum cascade structures containing superlattice up to 100 periods have been grown on SiGe virtual substrates by using solid-source molecular beam epitaxy at low temperature. The surface morphology and structural properties of the grown samples were characterized using various experimental techniques. It has been concluded that the structures were completely symmetrically strained with high crystalline quality, precise layer parameters, and excellent reproducibility. Electroluminescence was observed with peaked intensity at ∼3 THz at both 4 and 40 K, which agrees very well with expected interwell intersubband transition according to the design.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Molecular beam epitaxy (MBE); Si/SiGe; Quantum cascade; X-ray diffraction
Additional Information: Proceedings of the Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)
Publisher: Elsevier
ISSN: 0040-6090
Last Modified: 04 Jun 2017 03:43
URI: http://orca.cf.ac.uk/id/eprint/25327

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