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Electroluminescence from Si/SiGe quantum cascade emitters

Paul, D. J., Lynch, Stephen Anthony, Bates, R., Ikonic, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Liew, S. L., Cullis, A. G., Murzyn, P., Pidgeon, C., Arnone, D. D. and Robbins, D. J. 2003. Electroluminescence from Si/SiGe quantum cascade emitters. Physica E: Low-dimensional Systems and Nanostructures 16 (3-4) , pp. 309-314. 10.1016/S1386-9477(02)00689-6

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Abstract

Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at and at temperatures up to . The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of 20ps between 4 and 150K.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Si/SiGe; Intersubband electroluminescence; Quantum cascade emitters
Additional Information: Proceedings of Symposium H of the Spring Meeting of the European Materials Research Society (E-MRS) "Silicon-Based Optoelectronics: Advances and Future Perspectives'
Publisher: Elsevier
ISSN: 1386-9477
Last Modified: 04 Jun 2017 03:43
URI: http://orca.cf.ac.uk/id/eprint/25330

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