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Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

Zhao, M., Karim, A., Hansson, G. V., Ni, W.-X., Townsend, P., Lynch, Stephen Anthony and Paul, D. J. 2008. Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission. Thin Solid Films 517 (1) , pp. 34-37. 10.1016/j.tsf.2008.08.091

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Abstract

A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si0.8Ge0.2 virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Molecular beam epitaxy (MBE); Si/SiGe; Quantum cascade; X-ray diffraction; Transmission electron microscopy (TEM)
Publisher: Elsevier
ISSN: 0040-6090
Last Modified: 04 Jun 2017 03:43
URI: http://orca.cf.ac.uk/id/eprint/25334

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