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Lifetime measurements of group V donor Rydberg states in silicon at THz frequencies

Lynch, Stephen Anthony, Greenland, P. T., Vinh, N. Q., Litvinenko, K., Redlich, B., van der Meer, L., Warner, M., Stoneham, A. M., Aeppli, G., Pidgeon, C. R. and Murdin, B. N. 2008. Lifetime measurements of group V donor Rydberg states in silicon at THz frequencies. Presented at: 5th IEEE International Conference on Group IV Photonics, Sorrento, Italy, 17-19 September 2008. Published in: Pavesi, L. and Priolo, F. eds. Group IV Photonics, 2008, 5th IEEE International Conference, 17-19 Sept. 2008. Los Alamitos, CA: IEEE, pp. 24-26. 10.1109/GROUP4.2008.4638084

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Abstract

We have measured the T1 lifetimes of Rydberg states of phosphorus and arsenic in silicon at THz frequencies using the FELIX pulsed free electron laser. Our results show the dominant decoherence mechanism is lifetime broadening.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISBN: 9781424417698
Last Modified: 04 Jun 2017 03:43
URI: http://orca.cf.ac.uk/id/eprint/25335

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