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Ultrafast conditional carrier dynamics in semiconductor quantum dots

Borri, Paola and Langbein, Wolfgang Werner 2011. Ultrafast conditional carrier dynamics in semiconductor quantum dots. Presented at: Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, San Francisco, CA, USA, 23-26 January 2011. Published in: Tsen, Kong-Thon, Song, Jin-Joo, Betz, Markus and Elezzabi, Abdulhakem Y. eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV. Proceedings of SPIE SPIE, p. 793704. 10.1117/12.873835

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Abstract

We provide direct evidence that the macroscopic response of the gain dynamics in electrically-pumped In- GaAs/GaAs quantum dots is a superposition of intradot relaxation dynamics from microstates with multiple discrete carrier numbers. The gain recovery in the presence of an optical pre-pump fully depleting the ground-state gain is measured to be faster than without pre-pump. This effect, opposite to expectations from rate equations with mean-field carrier distributions, is due to a conditional gain recovery in which microstates with slow internal dynamics are suppressed by the pre-pump. The effect is evident at 15K and still observable at 300 K, beneficial for high-speed optical signal processing.

Item Type: Conference or Workshop Item (Paper)
Status: Published
Schools: Biosciences
Subjects: T Technology > T Technology (General)
T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher: SPIE
ISBN: 9780819484741
ISSN: 0277-786X
Funders: EPSRC
Related URLs:
Last Modified: 07 May 2019 19:40
URI: http://orca.cf.ac.uk/id/eprint/26008

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