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Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers

Smowton, Peter Michael and Blood, Peter 1995. Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers. Applied Physics Letters 67 (9) , pp. 1265-1267. 10.1063/1.114392

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: GALLIUM PHOSPHIDES, INDIUM PHOSPHIDES, ALUMINIUM PHOSPHIDES, QUANTUM WELLS, HETEROJUNCTIONS, SEMICONDUCTOR LASERS, THRESHOLD CURRENT, TEMPERATURE DEPENDENCE, ACTIVATION ENERGY, ARRHENIUS EQUATION, TRANSPORT THEORY
Additional Information: Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:01
URI: http://orca.cf.ac.uk/id/eprint/30880

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Cited 10 times in Web of Science. View in Web of Science.

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