Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Fermi level pinning and differential efficiency in GaInP quantum well laser diodes

Smowton, Peter Michael and Blood, Peter 1997. Fermi level pinning and differential efficiency in GaInP quantum well laser diodes. Applied Physics Letters 70 (9) , pp. 1073-1075. 10.1063/1.118488

[img]
Preview
PDF - Published Version
Download (247kB) | Preview
Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: gallium compounds, indium compounds, III-V semiconductors, quantum well lasers, Fermi level, interface states, spontaneous emission, laser cavity resonators
Additional Information: Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:01
URI: http://orca.cf.ac.uk/id/eprint/30889

Citation Data

Cited 9 times in Google Scholar. View in Google Scholar

Cited 11 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item

Downloads

Downloads per month over past year

View more statistics