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Self-consistent simulation of (AlGa)InP/GaInP visible lasers

Foulger, D. L., Smowton, Peter Michael, Blood, Peter and Mawby, P. A. 1997. Self-consistent simulation of (AlGa)InP/GaInP visible lasers. IEE Proceedings Optoelectronics 144 (1) , pp. 23-29. 10.1049/ip-opt:19971071

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Abstract

Self-consistent modelling of a 68 Å quantum well separate confinement heterostructure device lasing at 670 nm has been used to investigate the variation of threshold current with temperature. The authors have obtained a fit to experimental data using data from the literature and calculated that the threshold current at room temperature is 698 A cm-2 98% of this is recombination in the well and 2% is carrier loss. At 400 K, the threshold current density is 2713 Acm-2, 41% of this is spontaneous emission in the well, 54% is carrier leakage through the p-cladding layer, 3% is spontaneous recombination from the waveguide core and 1% is non-radiative recombination from the waveguide core. The model has also been used to investigate band edge spikes at heterojunctions and the effects of band bending in the well region on the gain/current relation and carrier leakage

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Institution of Engineering and Technology
ISSN: 1350-2433
Last Modified: 04 Jun 2017 04:01
URI: http://orca.cf.ac.uk/id/eprint/30895

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