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S-shaped negative differential resistance in 650 nm quantum well laser diodes

Yin, M., Smowton, Peter Michael, Blood, Peter, McAuley, B. and Button, C. C. 2001. S-shaped negative differential resistance in 650 nm quantum well laser diodes. Solid-State Electronics 45 (3) , pp. 447-452. 10.1016/S0038-1101(01)00018-1

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Abstract

The appearance of an S-shapednegativedifferentialresistance (NDR) in GaInP/AlGaInP quantumwell (QW) lasers has been observed in both single and multi-QW devices at temperatures between 100 and 200 K. Light–current (L–I) and current–voltage (I–V) relationships have been measured in detail at temperatures from 100 to 250 K, using three QW samples with different values of cladding layer thickness (1.0, 0.5 and 0.3 μm). The dependence of the S-shaped NDR characteristics on cladding thickness and laser output intensity shows that the high resistivity p-cladding layer is the cause of NDR. It is because of the impact ionisation of impurities in the p-cladding layer that an S-shaped NDR is produced. An impurity ionisation energy of ∼62 meV in p-type (Al0.7Ga0.3)0.52In0.48P is obtained from the I–V curve, which is consistent with that obtained from a hydrogenic model and accepted values.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Quantumwelllaser; Negativedifferentialresistance; Ionisation energy
Publisher: Elsevier
ISSN: 0038-1101
Last Modified: 04 Jun 2017 04:01
URI: http://orca.cf.ac.uk/id/eprint/30918

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