Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement

Groom, K. M., Tartakovskii, A. I., Mowbray, D. J., Skolnick, M. S., Smowton, Peter Michael, Hopkinson, M. and Hill, G. 2002. Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement. Applied Physics Letters 81 (1) , pp. 1-3. 10.1063/1.1489702

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, quantum well lasers, laser beams
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	04 Jun 2017 04:01
URI:	http://orca.cf.ac.uk/id/eprint/30931

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