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An investigation of multi-quantum barriers for band offset engineering in AlGaInP/GaInP lasers

Teng, K. S., Brown, M., Kestle, A., Smowton, Peter Michael, Blood, Peter, Pinches, S., Mawby, P. A. and Wilks, S. P. 2002. An investigation of multi-quantum barriers for band offset engineering in AlGaInP/GaInP lasers. Applied Surface Science 190 (1-4) , pp. 284-287. 10.1016/S0169-4332(01)00869-8

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Abstract

In this paper, we present a critical study of a multi-quantum barrier (MQB) structure fabricated using the Al0.5In0.5P/Ga0.5In0.5P material system. The structure was optimised theoretically based on a single Γ band model. When an identical structure was placed in a quantum well laser device, no improvement in the threshold current was observed compared to QW laser structure without an MQB. Cross-sectional scanning tunnelling microscopy (STM) was used to assess the structural quality of the MQB structure for the first time. Factors affecting the limited barrier enhancement are discussed in terms of the interfacial quality of the Al0.5In0.5P/Ga0.5In0.5P interface in the superlattice of the MQB and the need to consider multi-valley transport. The paper highlights some of the fundamental problems that must be overcome for MQBs to be a viable method to improve red laser efficiency.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Multi-quantum barrier; Scanning tunnelling microscopy; Interdiffusion; Laser; GaInP
Additional Information: PROCEEDINGS OF THE EIGHTH INTERNATIONAL CONFERENCE ON THE FORMATION OF SEMICONDUCTOR INTERFACES
Publisher: Elsevier
ISSN: 0169-4332
Last Modified: 04 Jun 2017 04:01
URI: http://orca.cf.ac.uk/id/eprint/30932

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