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Farfield characteristics of InGaAs/GaAs quantum dots laser

Ning, Y. Q., Gao, X., Wang, L. J., Smowton, Peter Michael and Blood, Peter 2001. Farfield characteristics of InGaAs/GaAs quantum dots laser. Presented at: Semiconductor Optoelectronic Device Manufacturing and Applications, Nanjing, China, 7 November 2001. Published in: Chen, D., Chen, R. T., Wang, G.-Y. and Zhu, C.-C. eds. Semiconductor Optoelectronic Device Manufacturing and Applications, Nanjing, China, 7 November 2001. Proceedings of SPIE , vol. 4602. Bellingham, WA: SPIE, pp. 106-109. 10.1117/12.445712

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Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: SPIE
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Last Modified: 04 Jun 2017 04:01
URI: http://orca.cf.ac.uk/id/eprint/30938

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