Farfield characteristics of InGaAs/GaAs quantum dots laser

Ning, Y. Q., Gao, X., Wang, L. J., Smowton, Peter Michael and Blood, Peter 2001. Farfield characteristics of InGaAs/GaAs quantum dots laser. Presented at: Semiconductor Optoelectronic Device Manufacturing and Applications, Nanjing, China, 7 November 2001. Published in: Chen, D., Chen, R. T., Wang, G.-Y. and Zhu, C.-C. eds. Semiconductor Optoelectronic Device Manufacturing and Applications, Nanjing, China, 7 November 2001. Proceedings of SPIE , vol. 4602. Bellingham, WA: SPIE, pp. 106-109. 10.1117/12.445712

Full text not available from this repository.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	SPIE
Related URLs:	Publisher
Last Modified:	04 Jun 2017 04:01
URI:	http://orca.cf.ac.uk/id/eprint/30938

Actions (repository staff only)

Edit Item