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Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond

Williams, Oliver Aneurin, Whitfield, M. D., Jackman, R. B., Foord, J. S., Butler, J. E. and Nebel, C. E. 2001. Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond. Diamond and Related Materials 10 (3-7) , pp. 423-428. 10.1016/S0925-9635(00)00556-2

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Low temperature Hall effect measurements made on diamond films subjected to a hydrogenation process, such that the near surface region becomes p-type without the addition of conventional dopant atoms, are reported. The carrier concentration within the temperature range 10–300 K does not change as expected for most films, actually increasing as the temperature falls. However, polished films display more conventional behaviour in that the carrier concentration falls with falling temperature. A model involving carrier transport within both valance and impurity bands can be considered to explain these observations, leading to the suggestion that the hydrogenation process is capable of creating acceptor states with an activation energy within the range of 10–40 meV.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Carrier generation; Surface region; Hydrogenation process; Thin film polycrystalline diamond
Publisher: Elsevier
ISSN: 0925-9635
Last Modified: 04 Jun 2017 04:11

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