Formation of shallow acceptor states in the surface region of thin film diamond

Williams, Oliver Aneurin, Whitfield, M. D., Jackman, R. B., Foord, J. S., Butler, J. E. and Nebel, C. E. 2001. Formation of shallow acceptor states in the surface region of thin film diamond. Applied Physics Letters 78 (22) , pp. 3460-3462. 10.1063/1.1345806

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	diamond, elemental semiconductors, carrier density, Hall effect, carrier mobility, semiconductor thin films, hydrogenation, impurity states, surface states
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	04 Jun 2017 04:11
URI:	http://orca.cf.ac.uk/id/eprint/34123

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