Williams, Oliver Aneurin, Whitfield, M. D., Jackman, R. B., Foord, J. S., Butler, J. E. and Nebel, C. E. 2001. Formation of shallow acceptor states in the surface region of thin film diamond. Applied Physics Letters 78 (22) , pp. 3460-3462. 10.1063/1.1345806 |
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Official URL: http://apl.aip.org/resource/1/applab/v78/i22/p3460...
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | diamond, elemental semiconductors, carrier density, Hall effect, carrier mobility, semiconductor thin films, hydrogenation, impurity states, surface states |
Additional Information: | Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014). |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
Date of First Compliant Deposit: | 30 March 2016 |
Last Modified: | 04 Jun 2017 04:11 |
URI: | http://orca.cf.ac.uk/id/eprint/34123 |
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