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Homoepitaxial growth for surface conductive device applications

Williams, Oliver Aneurin and Jackman, R. B. 2004. Homoepitaxial growth for surface conductive device applications. Diamond and Related Materials 13 (2) , pp. 325-328. 10.1016/j.diamond.2003.11.004

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Abstract

A high growth rate process has been used to grow thin homoepitaxial diamond layers on type Ib single crystal substrates. The layers are p-type due to the presence of surface adsorbed hydrogen. STM measurements confirm a highly smooth surface (<1.5 nm Ra) and Hall effect measurements indicate very high mobility values within the p-type layer at sheet carrier concentrations that are high enough to be useful for device applications (140 cm2 V−1 s−1 @ 2.5×1012 cm−2).

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Homoepitaxial; Diamond growth; Carrier concentrations; Hall effect; Hydrogen surface conductivity
Publisher: Elsevier
ISSN: 0925-9635
Last Modified: 04 Jun 2017 04:11
URI: http://orca.cf.ac.uk/id/eprint/34137

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