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High growth rate MWPECVD of single crystal diamond

Williams, Oliver Aneurin and Jackman, R. B. 2004. High growth rate MWPECVD of single crystal diamond. Diamond and Related Materials 13 (4-8) , pp. 557-560. 10.1016/j.diamond.2004.01.023

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Abstract

A key limitation to the development of homoepitaxial films for device applications has been the low growth rates achieved under standard growth conditions (typically approx. 1 μm/h). In this paper growth rates as high as 50 μm/h are demonstrated, using higher pressure conditions than normal, along with modified growth gas mixtures and substrate holder. This has been achieved without the intentional addition of nitrogen, which is known affect the electronic properties of diamond in a negative way. Films produced using this approach display surface conductivity, not seen when significant nitrogen contamination is present, and display excellent electronic properties.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Homoepitaxial growth; Single crystal diamond; Growth rate
Publisher: Elsevier
ISSN: 0925-9635
Last Modified: 04 Jun 2017 04:11
URI: http://orca.cf.ac.uk/id/eprint/34140

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