Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Williams, Oliver Aneurin and Jackman, R. B. 2004. Homoepitaxial diamond growth for the control of surface conductive carrier transport properties. Journal of Applied Physics 96 (7) , pp. 3742-3747. 10.1063/1.1789275

[img]
Preview
PDF - Published Version
Download (772kB) | Preview
Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: diamond, elemental semiconductors, semiconductor growth, surface conductivity, electron mobility, semiconductor epitaxial layers, electron density, plasma CVD, Hall mobility
Additional Information: Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0021-8979
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:11
URI: http://orca.cf.ac.uk/id/eprint/34142

Citation Data

Cited 8 times in Google Scholar. View in Google Scholar

Cited 9 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item

Downloads

Downloads per month over past year

View more statistics