Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range

Sherliker, Ben, Halsall, Matthew, Kasalynas, Irmantas, Seliuta, Dalius, Valusis, Gintaras, Vengris, Mikas, Barkauskas, Martynas, Sirutkaitis, Valdas, Harrison, P., Jovanovic, V. D., Indjin, D., Ikonic, Z., Parbrook, P. J., Wang, T. and Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783 2007. Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range. Semiconductor Science and Technology 22 (11) , 1240. 10.1088/0268-1242/22/11/010

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Abstract

Experimental results showing room temperature normal incidence mid-infrared detection by AlGaN/GaN quantum well infrared photodetectors are presented. Designed structures have intersubband transitions corresponding to wavelengths in the region of 3 and 4 µm, where strong absorption in a sapphire substrate dominates. The intersubband spectra, therefore, were characterized by electronic Raman scattering and infrared photocurrent spectroscopy. The absorption spectra agree well with theoretical predictions. Details of device fabrication are presented with sensitivity estimates for the devices.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institute of Physics Publishing
ISSN:	0268-1242
Last Modified:	19 May 2023 01:39
URI:	https://orca.cardiff.ac.uk/id/eprint/35829

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