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Observation of a structural transition during the low-temperature growth of the Si(111)7×7?Pb interface

Edwards, K. A., Howes, P. B., Macdonald, John Emyr, Hibma, T., Bootsma, T. and James, M. A. 1999. Observation of a structural transition during the low-temperature growth of the Si(111)7×7?Pb interface. Surface Science 424 (2-3) , pp. 169-178. 10.1016/S0039-6028(98)00880-2

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The low-temperature Si(111)7×7–Pb interface has been investigated using surface X-ray diffraction. The Schottky barrier height of the Pb/Si diode is known to depend on the atomic reconstruction of the interface. We have studied the structure of the evolving interface using X-ray growth oscillations and by interrupting the growth and measuring the specular reflectivity. Both techniques reveal that the film is initially highly disordered with irregular oscillations in the reflected intensity during growth. At a critical coverage of approximately five Pb layers, the whole overlayer crystallizes to a well-ordered Pb(111) structure with subsequent growth being layer-by-layer. Detailed models of the mature interface are consistent with the preservation, after burial, of the Si(111)7×7–Pb reconstruction originally formed during growth of the first monolayer.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Epitaxy; Low-temperature growth; Metal–semiconductor interfaces; Si(111)–Pb interface; Structural transition; X-ray diffraction
Publisher: Elsevier
ISSN: 0039-6028
Last Modified: 04 Jun 2017 04:52

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