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Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures

Zhao, M., Ni, W.-X., Townsend, P., Lynch, Stephen Anthony, Paul, D. J., Hsu, C. C. and Chang, M. N. 2005. Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures. Presented at: 2nd IEEE International Conference on Group 1V Photonics 2005, Antwerp, Belgium, 21-23 September 2005. 2nd IEEE International Conference on Group 1V Photonics. Piscataway, NJ: IEEE, pp. 10-12. 10.1109/GROUP4.2005.1516385

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Abstract

This study presents the growth of strain-symmetric Si/SiGe THz quantum cascade structures on virtual substrates with precise layer parameters, thick active region, and high material quality. Sample characterization is done using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISBN: 0780390709
Last Modified: 04 Jun 2017 04:52
URI: http://orca.cf.ac.uk/id/eprint/45936

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