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Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

Lynch, Stephen Anthony, Townsend, P., Paul, D. J., Bain, M., Gamble, H. S., Zhang, Jing, Ikonic, Z., Kelsall, R. W. and Harrison, Paul 2005. Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature. Presented at: 2nd IEEE International Conference on Group 1V Photonics 2005, Antwerp, Belgium, 21-23 September 2005. 2nd IEEE International Conference on Group 1V Photonics 2005. Piscataway, NJ: IEEE, pp. 13-16. 10.1109/GROUP4.2005.1516386

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Abstract

The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Additional Information: DOI didn't work
Publisher: IEEE
ISBN: 0780390709
Last Modified: 04 Jun 2017 04:52
URI: http://orca.cf.ac.uk/id/eprint/45947

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