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Influence of interfacial atomic structure on the Schottky-barrier height of Si(111)-Pb

Howes, P. B., Edwards, K. A., Hughes, D. J., MacDonald, John Emyr, Hibma, T., Bootsma, T. and James, M. 1995. Influence of interfacial atomic structure on the Schottky-barrier height of Si(111)-Pb. Physical Review B 51 (24) , pp. 17740-17743. 10.1103/PhysRevB.51.17740

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Abstract

The Schottky-barrier height for Si(111)-Pb diodes is known to depend on the initial reconstruction at monolayer coverages. While other studies have concentrated on the details of the initial stages of growth, we present evidence of structural differences at the buried interface which correlate with previously reported differences in the Schottky-barrier heights. X-ray diffraction measurements show that for growth on the Si(111)7×7-Pb phase the reconstruction is essentially unchanged by burying whereas the Si(111)√3 × √3 R30°-Pb reconstruction is destroyed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 04 Jun 2017 04:52
URI: http://orca.cf.ac.uk/id/eprint/45961

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