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The growth and atomic structure of the Si(1 1 1)-indium interface studied by surface X-ray diffraction

Finney, M. S., Norris, C., Howes, P. B., James, M. A., MacDonald, John Emyr, Johnson, A. D. and Vlieg, E. 1994. The growth and atomic structure of the Si(1 1 1)-indium interface studied by surface X-ray diffraction. Physica B: Condensed matter 198 (1-3) , pp. 246-248. 10.1016/0921-4526(94)90171-6

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Abstract

Surface X-ray diffraction has been used to monitor the growth of indium on silicon (1 1 1) as a function of temperature and to determine the atomic structure of the Si(1 1 1) 4 × 1-In reconstruction. The results indicate there are four indium atoms per 4 × 1 unit mesh with an average near neighbour separation which is reduced from that of the indium bulk.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0921-4526
Last Modified: 04 Jun 2017 04:52
URI: http://orca.cf.ac.uk/id/eprint/45964

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Cited 24 times in Web of Science. View in Web of Science.

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