Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures

Tabata, A., Benyattou, T., Pogany, D., Guillot, G., Clark, S. A., MacDonald, John Emyr, Westwood, David and Williams, R. H. 1993. Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures. Applied Surface Science 65-66 , pp. 814-820. 10.1016/0169-4332(93)90761-Y

Full text not available from this repository.

Abstract

Photoluminescence measurements have been performed in two series of strained InxGa1-xAs/InP single heterostructures, grown by molecular beam epitaxy with different epilayer thicknesses. Tensile strained samples (xIn = 0.508) and compressive strained samples (xIn = 0.543) have been investigated. An emission 30 meV below the excitonic recombination has been observed in these structures and we ascribe it to a recombination between photocreated holes and electrons from the two-dimensional electron gas formed at the InGaAs/InP interface. The role of the epilayer thickness on the photoluminescence recombination mechanism of the two-dimensional electron gas is discussed. Measurements of the photoluminescence temperature dependence have revealed the heavy-hole and light-hole splitting in this emission. The value of this splitting is in very good agreement with the expected values obtained by double crystal X-ray diffraction measurements.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0169-4332
Last Modified: 04 Jun 2017 04:52
URI: http://orca.cf.ac.uk/id/eprint/45965

Actions (repository staff only)

Edit Item Edit Item