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Optical cavities for Si/SiGe tetrahertz quantum cascade emitters

Kelsall, R. W., Ikonic, Z., Harrison, P., Lynch, Stephen Anthony, Townsend, P., Paul, D. J., Norris, D. J., Liew, S. L., Cullis, A. G., Li, X., Zhang, J., Bain, M. and Gamble, H. S. 2005. Optical cavities for Si/SiGe tetrahertz quantum cascade emitters. Optical Materials 27 (5) , pp. 851-854. 10.1016/j.optmat.2004.08.023

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Abstract

The use of buried tungsten silicide layers for confinement of terahertz optical modes is described. Silicon-on-silicide substrates are prepared using a bond and etch-back technique, and the successful growth of extremely long (600 period) strain-balanced p-Si/SiGe quantum cascade heterostructures on these substrates is demonstrated. THz electroluminescence is observed from these structures at low temperature, when the structure is biased so as to obtain interwell (‘diagonal’) transitions between heavy and light hole subbands. The emission shows a strong polarisation dependence, indicating the efficacy of the silicide layer in confining long wavelength TM modes.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0925-3467
Last Modified: 04 Jun 2017 04:52
URI: http://orca.cf.ac.uk/id/eprint/46002

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