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Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffraction

Lohmeier, Martin, van der Vegt, H. A., van Silfhout, R. G., Vlieg, E., Thornton, J. M. C., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 and Scholte, P. M. L. O. 1992. Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffraction. Surface Science 275 (3) , pp. 190-200. 10.1016/0039-6028(92)90793-6

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Abstract

The atomic structure of the 2 × 1 reconstruction induced by the adsorption of Sb on Ge(001) has been determined by X-ray diffraction. Sb can be grown on Ge(001) in large ordered domains at elevated temperatures. SbSb dimers replace the Ge dimers of the clean Ge(001) surface and pick up all dangling bonds. The dimers have a bond length of 2.90 Å and are midpoint-shifted by 0.16 Å with respect to the substrate bulk unit cell. Such an asymmetric dimer is reported for the first time for a group IV/V system. Relaxations of the four topmost substrate layers are measured as well, and these compare favourably to elastic strain calculations.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0039-6028
Last Modified: 24 Oct 2022 10:51
URI: https://orca.cardiff.ac.uk/id/eprint/46133

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