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Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffraction

Lohmeier, Martin, van der Vegt, H. A., van Silfhout, R. G., Vlieg, E., Thornton, J. M. C., MacDonald, John Emyr and Scholte, P. M. L. O. 1992. Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffraction. Surface Science 275 (3) , pp. 190-200. 10.1016/0039-6028(92)90793-6

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The atomic structure of the 2 × 1 reconstruction induced by the adsorption of Sb on Ge(001) has been determined by X-ray diffraction. Sb can be grown on Ge(001) in large ordered domains at elevated temperatures. SbSb dimers replace the Ge dimers of the clean Ge(001) surface and pick up all dangling bonds. The dimers have a bond length of 2.90 Å and are midpoint-shifted by 0.16 Å with respect to the substrate bulk unit cell. Such an asymmetric dimer is reported for the first time for a group IV/V system. Relaxations of the four topmost substrate layers are measured as well, and these compare favourably to elastic strain calculations.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0039-6028
Last Modified: 04 Jun 2017 04:53

Cited 24 times in Web of Science. View in Web of Science.

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