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The growth and characterisation of epitaxial insulating HoF3 layers on silicon

Griffiths, C. L., MacDonald, John Emyr and Williams, R. H. 1992. The growth and characterisation of epitaxial insulating HoF3 layers on silicon. Applied Surface Science 56-58 (2) , pp. 782-788. 10.1016/0169-4332(92)90338-X

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Abstract

The growth of single-crystal layers of HoF1 on Si(100) and Si(111) atomatically clean surfaces has been studied by means of a surface science approach coupled with X-ray diffraction. Investigations of chemical interactions indicate the formation of Sisingle bondHo bonds and suggest the creation of a volatile fluoride. Film thicknesses above about 12Åwere relaxed leading to a multidomain orthorhombic structure, whereas for thicknesses less than this a pseudomorphic strained layer tysonite structure may be observed Band gaps and discontinuities are also discussed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0169-4332
Last Modified: 04 Jun 2017 04:53
URI: http://orca.cf.ac.uk/id/eprint/46134

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Cited 1 time in Google Scholar. View in Google Scholar

Cited 2 times in Web of Science. View in Web of Science.

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