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X-ray reflectivity of an Sb delta-doping layer in silicon

Slijkerman, W. F. J., Gay, J. M., Zagwijn, P. M., van der Veen, J. F., MacDonald, John Emyr, Williams, A. A., Gravesteijn, D. J. and van de Walle, G. F. A. 1990. X-ray reflectivity of an Sb delta-doping layer in silicon. Journal of Applied Physics 68 (10) , pp. 5105-5109. 10.1063/1.347047

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Abstract

X‐ray reflectivity measurements were made on Si(001) crystals containing a delta‐doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Antimony; Silicon; Reflectivity; X Radiation; Doping Profiles
Additional Information: Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0021-8979
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:53
URI: http://orca.cf.ac.uk/id/eprint/46143

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