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X-Ray scattering from semiconductor interfaces

MacDonald, John Emyr 1990. X-Ray scattering from semiconductor interfaces. Faraday Discussions of the Chemical Society 89 , pp. 191-200. 10.1039/dc9908900191

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Abstract

X-ray diffraction has been used to determine the structure of surfaces over the past decade or so. The concepts involved in surface structure determination may be extended to the study of buried interfaces. A formalism for the determination of the structure of epitaxial interfaces is outlined, together with its application to the NiSi2/Si(111) interface. The use of a grazing incidence diffraction geometry to investigate strain relaxation in latticemismatched epilayers on the monolayer scale is discussed. The technique has been employed to monitor strain relaxation in thin Ge overlayers on Si(001) substrates with greater sensitivity than is attainable using other techniques. The results indicate that strain relaxation in this system relates primarily to islanding on the surface rather than the formation of misfit dislocations.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Royal Society of Chemistry
ISSN: 0301-7249
Last Modified: 04 Jun 2017 04:53
URI: http://orca.cf.ac.uk/id/eprint/46145

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Cited 1 time in Web of Science. View in Web of Science.

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